Programs in Physics & Physical Chemistry
|[Licence| Download | New Version Template] advl_v3_0.tar.gz(3046 Kbytes)|
|Manuscript Title: Model-Driven Development for scientific computing. Computations of RHEED intensities for a disordered surface. Part II|
|Authors: Andrzej Daniluk|
|Program title: Growth09|
|Catalogue identifier: ADVL_v3_0|
Distribution format: tar.gz
|Journal reference: Comput. Phys. Commun. 181(2010)709|
|Programming language: Embarcadero Delphi.|
|Computer: Intel Core Duo-based PC.|
|Operating system: Windows XP, Vista, 7.|
|RAM: more than 1 GB|
|Supplementary material: The figures mentioned in the "Summary of revisions" section, can be obtained here.|
|Keywords: Reflection high-energy electron diffraction (RHEED), UML, Model-Driven Development (MDD), Model-Driven Architecture (MDA), Model-Driven Engineering (MDE).|
|Classification: 4.3, 7.2, 6.2, 8, 14.|
Does the new version supersede the previous version?: No
Nature of problem:
Molecular beam epitaxy (MBE) is a technique for epitaxial growth via the interaction of one or several molecular or atomic beams that occurs on a surface of a heated crystalline substrate. Reflection high-energy electron diffraction (RHEED) is an important in situ analysis technique, which is capable of giving quantitative information about the growth process of thin films and its control. The analysis of RHEED intensity oscillations has two purposes. One is to control the film growth, and the other is to understand the mechanism of the film growth using the MBE through the analysis of surface morphology as a function of time. Such control allows the development of structures where the electrons can be confined in space, giving quantum wells or even quantum dots. Such layers are now a critical part of 3 many modern semiconductor devices, semiconductor lasers, light-emitting diodes and new devices for the magnetic storage industry.
The present paper reports a practical and pragmatic approach for MDD technology  that has been used during design of the Growth09 program. Growth09 is a numerical model that uses multithreaded and partially nested transactions for simulation of epitaxial growth of thin films.
Reasons for new version:
Responding to user feedback the program has been upgraded to a standard that allows a slave process, carrying out computations of the RHEED intensities for a disordered surface, to be run. Also, functionality and documentation of the program have been improved.
Summary of revisions:
* The figures mentioned can be downloaded, see "Supplementary material" above.
The program is distributed in the form of main project Growth09.dproj, with associated files, and should be compiled using Embarcadero RAD Studio 2010 along with Together visual modelling platform.
The program should be compiled with English/USA regional and language options.
This version of the GROWTH program is designed to run in conjunction with the RHEED1DProcess, (ADUY_v4_0) program. It does not replace the previous, stand alone, GROWTH06-v2 (ADVL_v2_1) version.
The typical running time is machine and user-parameters dependent.
|||OMG, Model Driven Architecture Guide Version 1.0.1, 2003.|
|||P. Mazurek, A. Daniluk, K. Paprocki, Vacuum 72(4) (2004) 363.|
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